diff --git a/PCB/diagrams/power_control_layout.html b/PCB/diagrams/power_control_layout.html index 35b21cb..478cdc5 100644 --- a/PCB/diagrams/power_control_layout.html +++ b/PCB/diagrams/power_control_layout.html @@ -276,11 +276,11 @@

What's on this sheet

Q_PWR1DMG2305UXSOT-23Main power switch — VSYS to PWR_EN, carries full system current R_PWR_EN_PD1100kΩ0402PWR_EN pull-down to GND — the buck's EN pin has no internal bias and must not be left floating (callout G) - Q_LATCH12N7002SOT-23Pulls Q_PWR1's gate low to turn it on + Q_LATCH1AO3400ASOT-23Pulls Q_PWR1's gate low to turn it on; low-Vth (≤1.45V) so a press still turns it on at the bottom of the battery range (callout D) D_OR1 / D_OR21N4148WSOD-123Diode-OR: PWR_BTN_TRIGGER (actual button press, via the inverter) or MCU hold, either one latches power on R_GATE1100kΩ0402Q_PWR1 gate pull-up — off by default R_LATCH_G11MΩ0402Q_LATCH1 gate pull-down — off by default; sized to not starve the diode-OR's drive (callout D) - R_BTN_PU1100kΩ0402Button sense pull-up — MCU reads pressed (0V) vs idle (VSYS) + R_BTN_PU1100kΩ0402Button sense pull-up to 3V3 (not VSYS) — MCU reads pressed (0V) vs idle (3.3V); callout H R_INV_BASE1100kΩ0402Dedicated VSYS pull-up for Q_INV1's base — decoupled from PWR_BTN_SENSE (callout F) D_INV_ISO1BAT54WSOD-123Schottky isolator: lets a press pull Q_INV1's base low without loading PWR_BTN_SENSE Q_INV1MMBT3904SOT-23Inverter: idle (button up) holds PWR_BTN_TRIGGER low; pressed lets R_INV_PU1 pull it high @@ -399,7 +399,7 @@

Suggested floorplan

Q_LATCH1 - 2N7002 (NMOS) + AO3400A (NMOS) G @@ -429,7 +429,7 @@

Suggested floorplan

- VSYS + 3V3 R_BTN_PU1 100k Q_LATCH1 - 2N7002 (NMOS) + AO3400A (NMOS) G @@ -129,7 +129,7 @@ - VSYS + 3V3 R_BTN_PU1 100k