diff --git a/PCB/diagrams/power_control_layout.html b/PCB/diagrams/power_control_layout.html
index 35b21cb..478cdc5 100644
--- a/PCB/diagrams/power_control_layout.html
+++ b/PCB/diagrams/power_control_layout.html
@@ -276,11 +276,11 @@
| Q_PWR1 | DMG2305UX | SOT-23 | Main power switch — VSYS to PWR_EN, carries full system current |
| R_PWR_EN_PD1 | 100kΩ | 0402 | PWR_EN pull-down to GND — the buck's EN pin has no internal bias and must not be left floating (callout G) |
- | Q_LATCH1 | 2N7002 | SOT-23 | Pulls Q_PWR1's gate low to turn it on |
+ | Q_LATCH1 | AO3400A | SOT-23 | Pulls Q_PWR1's gate low to turn it on; low-Vth (≤1.45V) so a press still turns it on at the bottom of the battery range (callout D) |
| D_OR1 / D_OR2 | 1N4148W | SOD-123 | Diode-OR: PWR_BTN_TRIGGER (actual button press, via the inverter) or MCU hold, either one latches power on |
| R_GATE1 | 100kΩ | 0402 | Q_PWR1 gate pull-up — off by default |
| R_LATCH_G1 | 1MΩ | 0402 | Q_LATCH1 gate pull-down — off by default; sized to not starve the diode-OR's drive (callout D) |
- | R_BTN_PU1 | 100kΩ | 0402 | Button sense pull-up — MCU reads pressed (0V) vs idle (VSYS) |
+ | R_BTN_PU1 | 100kΩ | 0402 | Button sense pull-up to 3V3 (not VSYS) — MCU reads pressed (0V) vs idle (3.3V); callout H |
| R_INV_BASE1 | 100kΩ | 0402 | Dedicated VSYS pull-up for Q_INV1's base — decoupled from PWR_BTN_SENSE (callout F) |
| D_INV_ISO1 | BAT54W | SOD-123 | Schottky isolator: lets a press pull Q_INV1's base low without loading PWR_BTN_SENSE |
| Q_INV1 | MMBT3904 | SOT-23 | Inverter: idle (button up) holds PWR_BTN_TRIGGER low; pressed lets R_INV_PU1 pull it high |
@@ -399,7 +399,7 @@ Suggested floorplan
Q_LATCH1
- 2N7002 (NMOS)
+ AO3400A (NMOS)
G
@@ -429,7 +429,7 @@ Suggested floorplan
- VSYS
+ 3V3
R_BTN_PU1 100k
Q_LATCH1
- 2N7002 (NMOS)
+ AO3400A (NMOS)
G
@@ -129,7 +129,7 @@
- VSYS
+ 3V3
R_BTN_PU1 100k